http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113921470-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 2021-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113921470-B |
| titleOfInvention | Semiconductor structure and manufacturing method thereof |
| abstract | The invention provides a semiconductor structure and a manufacturing method thereof, comprising the following steps: a substrate is provided. Forming a gate region on the substrate, wherein the gate region comprises a first gate region and a second gate region. The gate structure in the first gate region is removed. And forming a metal gate in the first gate region. And etching part of the gate structure in the second gate region. Forming a barrier layer in the second gate region. And forming a plurality of connecting bolts in the gate region, wherein part of the connecting bolts are positioned on the first gate region and the second gate region, and part of the connecting bolts are positioned on two sides of the first gate region. Wherein, the height of the barrier layer is equal to that of the metal gate. The semiconductor structure and the manufacturing method thereof provided by the invention improve the resistance performance of the semiconductor device in the working process. |
| priorityDate | 2021-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.