Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
filingDate |
2021-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c6da37c1122016f0dfecd96e0ca6ff3 |
publicationDate |
2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-113921468-A |
titleOfInvention |
Method for forming an epitaxial layer on a substrate in a chamber |
abstract |
The present disclosure describes a method of forming an epitaxial layer on a substrate in a chamber. The method includes cleaning the chamber with a first etching gas and depositing an epitaxial layer on the substrate. The deposition of the epitaxial layer includes epitaxial growth of a first portion of the epitaxial layer using a precursor, cleaning of the substrate and chamber using a flushing of a second etch gas different from the first etch gas, and epitaxial growth of the epitaxial layer using the precursor the second part of the crystal layer. The first part has the same composition as the second part. The method also includes etching a portion of the epitaxial layer using a third etch gas having a higher flow rate than the second etch gas. |
priorityDate |
2020-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |