http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113871556-B
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C257-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C213-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C257-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C217-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C213-00 |
filingDate | 2021-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2022-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2022-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-113871556-B |
titleOfInvention | A kind of preparation method of perovskite thin film in semiconductor device |
abstract | The invention relates to a method for preparing a perovskite thin film in a semiconductor device, and relates to a semiconductor device, including providing a semiconductor substrate on which an interface layer is formed; and providing a perovskite precursor solution, wherein the perovskite precursor solution is On the basis of CsPbBr 3 , a solution formed by A-site cations and/or organic cation molecules is added, and the perovskite precursor solution is used to directly form a perovskite thin film layer on the interface layer to achieve high flatness and low pinhole perovskite films, thereby improving the performance of optoelectronic devices. |
priorityDate | 2021-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 72.