http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113823684-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0f34a151368c651809717a72153988e5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7782 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 |
| filingDate | 2021-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_838d8e52343c54870230f9417a96c013 |
| publicationDate | 2021-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113823684-A |
| titleOfInvention | Double-heterojunction HEMT device based on cap layer and back barrier layer and preparation method thereof |
| abstract | The invention discloses a double heterojunction HEMT device based on a cap layer and a back barrier layer and a preparation method thereof, wherein the preparation method comprises the following steps: performing ion implantation on the first substrate to form a second substrate; forming a bonding interlayer on the second substrate, and reacting beta-Ga 2 O 3 Transferring to the bonding interlayer to form a heterojunction substrate; growing a buffer layer on the upper surface of the heterojunction substrate; forming a back barrier layer on the upper surface of the buffer layer; sequentially growing a secondary barrier layer, a first doping layer, a first heterojunction layer, a quantum well layer, a second heterojunction layer, a second doping layer and a primary barrier layer on the upper surface of the back barrier layer; performing ion implantation on two sides of the upper surface of the main barrier layer to form a source electrode ohmic contact region and a drain electrode ohmic contact region; forming a source electrode and a drain electrode; growing cap layers on two sides of the main barrier layer; growing an oxide layer on the cap layer and the main barrier layer, and growing a dielectric layer on the oxide layer(ii) a Forming a grid on the dielectric layer; and growing a passivation layer on the upper surface of the dielectric layer. |
| priorityDate | 2021-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.