http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113808779-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C1-034 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C1-034 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-18 |
| filingDate | 2021-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113808779-B |
| titleOfInvention | Low-temperature curing insulating medium slurry for chip resistor |
| abstract | The invention discloses a low-temperature curing insulating dielectric paste for a chip resistor, which is prepared from 30-50% of solid filler, 10-15% of epoxy resin, 30-40% of organic carrier, 1-5% of curing agent and 5-10% of diluent, wherein the solid filler is a mixture of barium titanate, micron-sized silicon dioxide, antimony trioxide, hydrophobic nano-silicon dioxide and black pigment, and the organic carrier is prepared by dissolving phenoxy resin with the weight-average molecular weight of 30000-60000 in an organic solvent, wherein the total weight of the dielectric paste is 100%. When the insulating medium paste is used for a protective medium film layer of a chip resistor, the insulating medium paste has good printing property, insulating property and breakdown voltage resistance, and the moderate pencil hardness can better meet the process application characteristics of the chip resistor. |
| priorityDate | 2021-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.