http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113783107-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 |
| filingDate | 2021-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113783107-B |
| titleOfInvention | A kind of manufacturing method of quantum cascade laser |
| abstract | The invention provides a method for manufacturing a quantum cascade laser, comprising the following steps: forming a ridge-shaped epitaxial region, including a buffer layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer sequentially formed from a substrate layer; The ridge-shaped epitaxial region has inclined sides, and the inclined sides sequentially include the sides of the buffer layer, the sides of the lower waveguide layer, the sides of the active layer, the sides of the upper waveguide layer and the sides of the upper confinement layer from the substrate layer. The sloped sides of the ridge epitaxial region are deoxidized. The step of deoxidizing treatment includes: using a treatment liquid to remove the oxide layer on the surface of the inclined side. Preheating the ridge-shaped epitaxial region to a first temperature under a protective gas atmosphere, the first temperature being lower than the thermal decomposition temperature of the material of the active layer. The process gas is separately preheated to a second temperature, the second temperature being greater than the first temperature. Introducing a process gas at a second temperature into the ridge epitaxial region at the first temperature, and maintaining the temperature of the ridge epitaxial region for a reaction time. |
| priorityDate | 2021-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.