http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113782631-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ffbb9cdfa85b2b9eb7031a1e56c8219a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0747 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0747 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2021-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d68499554b7fd388c5d9b6d38098541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_515d898da1f8aaadec7ca820689a146d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04df6f810068f3863899e54d48b209cd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba7feaa221804253bd32ad79e46d3125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_514677139763c90fc014f1cc2a82bfd4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e683941fc434b223d74291e72026fb5d |
| publicationDate | 2021-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113782631-A |
| titleOfInvention | Heterojunction solar cell with buffer protective film and preparation method thereof |
| abstract | The invention discloses a heterojunction solar cell with a buffer protective film and a preparation method thereof, the heterojunction solar cell comprises a crystalline silicon substrate (1), amorphous silicon intrinsic layers (2) are deposited on the front surface and the back surface of the crystalline silicon substrate, N-type and P-type doped amorphous silicon layers are respectively deposited on the outer sides of the amorphous silicon intrinsic layers, a buffer protective transparent conductive film (5) is deposited on the outer side of the P-type doped amorphous silicon layer (4), a transparent conductive layer (6) is prepared by depositing the buffer protective transparent conductive film and the outer side of the N-type doped amorphous silicon layer (3), and a metal electrode (7) is arranged on the outer side of the transparent conductive layer, the preparation method comprises the following steps: and depositing a buffer protection transparent conductive film on the P-type doped amorphous silicon layer by adopting a vapor deposition method, and depositing a transparent conductive layer on the buffer protection transparent conductive film and the N-type amorphous silicon by adopting a magnetron sputtering method. The invention greatly reduces the bombardment damage of low-energy particles to the doped amorphous silicon layer, protects the PN junction performance of the heterojunction cell and improves the performance of the heterojunction solar cell. |
| priorityDate | 2021-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.