http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113764570-A

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filingDate 2021-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d15a97504d599823f7bc5716cfa1ff9b
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publicationDate 2021-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113764570-A
titleOfInvention Piezoelectric structure and preparation method thereof
abstract The invention provides a piezoelectric structure and a preparation method thereof. The piezoelectric structure comprises: a piezoelectric film layer; a seed layer located on one side surface of the piezoelectric film layer; nanowires located on the side surface of the seed layer away from the piezoelectric film layer The material of the array layer and the nanowire array layer is semiconductor piezoelectric material. When the deformation occurs under the external action, the piezoelectric film layer and the nanowire array layer produce a piezoelectric effect, and opposite charges are generated on the two opposite surfaces of the piezoelectric film layer and the two opposite surfaces of the nanowire array layer. The seed layer located between the two is subjected to the action of an electric field. Under the action of the above electric field, the seed layer realizes the series connection of the piezoelectric film layer and the nanowire array layer. The addition of the electric energy generated by the line array layer effectively improves the piezoelectric conversion efficiency of the piezoelectric material.
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