http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113764402-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0b3ed209707008460eb418d12dff55ce |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66386 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7424 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-747 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-747 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-74 |
filingDate | 2020-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cff1dedb4ef80701a97add43137bb63 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e225c7dcb9cdf8757876bf194caa99b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e25bec3b46ace78281543fccafe9970b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27fb2402e0f4f62365f2ec29b1538f9e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83a8d04c139c4589200396c0e0a63f25 |
publicationDate | 2021-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-113764402-A |
titleOfInvention | High-protection-level unidirectional silicon controlled rectifier electrostatic protection device and manufacturing method thereof |
abstract | The invention discloses a high-protection-level unidirectional silicon controlled rectifier electrostatic protection device, which comprises a P-type substrate; a first N-type deep well and a second N-type deep well are arranged in the substrate; a P well is arranged on the right side of the second N-type deep well; a first P + injection region and a first N + injection region are arranged in the first N-type deep well; a second P + injection region and a second N + injection region are arranged in the second N-type deep well; a fourth N + injection region in cross connection is arranged between the first N-type deep well and the second N-type deep well; a third P + injection region and a third N + injection region are arranged in the P well; the first P + injection region, the first N + injection region, the second P + injection region and the second N + injection region are connected together and used as an anode of the device, and the third P + injection region and the third N + injection region are connected together and used as a cathode of the device. |
priorityDate | 2020-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 189.