http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113707535-A

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filingDate 2021-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d4dec1ca0d4359c13328041c11c02f4
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publicationDate 2021-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113707535-A
titleOfInvention Method for etching indium phosphide wafer
abstract The invention discloses a corrosion method of an indium phosphide wafer, and relates to the technical field of semiconductor materials. According to the corrosion method of the indium phosphide wafer, the wafer is subjected to pre-cleaning and then subjected to corrosion twice, the wafer is subjected to corrosion treatment by adopting a primary corrosion solution and a secondary corrosion solution respectively in the corrosion twice, and the raw materials of the primary corrosion solution comprise hydrogen peroxide, sulfuric acid, citric acid and glacial acetic acid. The invention discloses an indium phosphide wafer etching method, which can etch a wafer body, does not need to grind again even if the wafer is touched, does not need cooling equipment in the etching process, and can directly etch the wafer at normal temperature.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114540033-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115491203-A
priorityDate 2021-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 38.