http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113698203-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3291 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6567 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-495 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-57 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-495 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M9-04 |
| filingDate | 2021-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113698203-B |
| titleOfInvention | Yttrium and hafnium co-doped silver niobate lead-free antiferroelectric ceramic material and preparation method thereof |
| abstract | The invention discloses a silver niobate-based antiferroelectric ceramic material, which has a chemical formula of Ag x 1‑3 Y x Nb x 1‑ Hf x O 3 X is more than or equal to 0 and less than or equal to 0.10, preferably more than or equal to 0.03 and less than or equal to 0.05, and has the characteristic of electric field induced antiferroelectric-ferroelectric phase transition. The process reduces the high-temperature sintering time of the silver niobate ceramic material, reduces the energy consumption by 23 percent, improves the compactness of the material and reduces the grain size, and improves the energy storage density and the energy storage efficiency by 22.2 percent and 13.5 percent respectively. According to the invention, the energy storage density of the obtained material is 2.2-5.3J/cm while the production energy consumption is reduced 3 And the energy storage efficiency is 42-80%. The pulse power source has very important application value. |
| priorityDate | 2021-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.