http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113697868-B

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-40
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G53-006
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-505
filingDate 2021-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113697868-B
titleOfInvention A kind of preparation method of ternary precursor
abstract The invention discloses a preparation method of a ternary precursor. Firstly, the first metal salt solution containing soluble nickel salt, cobalt salt and manganese salt, ammonia water and sodium hydroxide solution are mixed, the pH is controlled, and the preparation is carried out under heating and stirring. reaction, the resulting slurry is aged and filtered to obtain precursor crystal seeds, and then the precursor crystal seeds are placed in dilute acid solution, stirred, and filtered to obtain acidified seed crystals, which will contain soluble nickel salts, cobalt salts and manganese salts The second metal salt solution, the sodium hydroxide solution and the seed crystal after acidification are mixed, the pH is adjusted, and the reaction is carried out under heating and stirring, and the obtained slurry is aged, filtered and dried to obtain a ternary precursor. In the present invention, the precursor crystal seed is put into the dilute acid solution and stirred, the amorphous micropowder on the surface of the seed crystal dissolves, the crystal structure becomes more complete, and the primary particles also become thinner and thinner under the acid leaching condition, which is beneficial to the wafer edge in the subsequent ammonia-free process. The continuous growth on the surface of the seed crystal creates favorable conditions.
priorityDate 2021-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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