http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113690327-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f90c1df3857ee72900e0015c75caecd9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-204 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 |
| filingDate | 2021-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68aa2835936dbd33ab63cae2bf061449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c548f71b8bb8a97087f793c74ad3258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5660a80e3f303df7ba0508f2c16755c0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b490b75d69fb16d2cbbeb5ec7beeb7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38eb0ca96e6f4c487a0248c278767641 |
| publicationDate | 2021-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113690327-A |
| titleOfInvention | Silicon oxide/wide-band-gap polycrystalline silicon alloy passivation contact structure and online continuous preparation method thereof |
| abstract | The invention discloses a silicon oxide/wide band gap polycrystalline silicon alloy passivation contact structure for improving the performance of a crystalline silicon solar cell and an online continuous preparation method thereof. The passivation contact structure comprises an ultrathin tunneling silicon oxide layer with a passivation function and a wide-band-gap polysilicon alloy layer with a field passivation function. The specific preparation process comprises the following steps: 1) putting the sample after cleaning and texturing, front boron diffusion and rear polishing into a PECVD chamber, and only introducing oxygen-containing gas to perform plasma on-line oxidation to prepare an ultrathin tunneling silicon oxide layer; 2) introducing corresponding gas to deposit the doped amorphous silicon alloy layer; 3) and putting the sample into an annealing furnace for annealing to obtain the silicon oxide/wide band gap polycrystalline silicon alloy passivation contact structure. The silicon oxide/wide band gap polycrystalline silicon alloy passivation contact structure disclosed by the invention is continuously prepared on line in the same PECVD (plasma enhanced chemical vapor deposition) equipment, so that interface pollution caused by atmosphere exposure is avoided, the production efficiency is improved, and the performance of a crystalline silicon solar cell is improved. |
| priorityDate | 2021-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.