http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113690129-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ecfd0ca400b53291d682a0607cad7c90 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B28D5-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B28D5-0058 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B28D5-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B28D5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2021-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97679618afe47b3918e456316cfb71a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23513612fa483985a3d4696fd8e7225a |
| publicationDate | 2021-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113690129-A |
| titleOfInvention | Preparation method of quartz wafer for high-precision piezoelectric sensor |
| abstract | The invention discloses a preparation method of a quartz wafer for a high-precision piezoelectric sensor, which comprises the following steps: putting the quartz wafer into a film coating machine, and sputtering a metal protective film; removing the metal film of the processing part of the wafer by laser; carrying out wafer corrosion treatment on the quartz wafer; orienting according to the required crystal orientation on an X-ray orientation instrument, and cutting the hollow crystal plate in a multi-line cutting mode; chamfering, roughly grinding and rounding the cut wafer, and then finely grinding the wafer; carrying out metal corrosion and polishing treatment on the processed and formed wafer, removing the protective film and eliminating stress; and carrying out angle screening on the wafer to ensure that the wafer is in angle concentration. During processing, the wafer main body is protected by the protective film to avoid damage, metal corrosion and polishing treatment are finally carried out on the processed and formed wafer, the protective film is removed, stress is eliminated, angle screening is carried out, and the wafer angle concentration is ensured, so that a high-precision wafer is obtained, the wafer processing efficiency and the precision are high, and the wafer processing method has popularization value. |
| priorityDate | 2021-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.