http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113683433-B

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-614
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-80
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-565
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-80
filingDate 2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113683433-B
titleOfInvention In-situ grown carbon interface layer modified SiC/SiC composite material and preparation method thereof
abstract The invention provides an in-situ grown carbon interface layer modified SiC/SiC composite material and a preparation method thereof, wherein the method comprises the following steps: (1) reacting the SiC fiber preform with a first precursor to obtain a first sample (2) containing a carbon interface layer, carrying out chemical vapor deposition reaction on the first sample and a second precursor to further obtain a second sample (3) containing an SiC interface outer layer, and soaking the second sample in a third precursor to obtain a third sample; (4) carrying out curing and cracking reactions on the third sample in sequence to obtain a fourth sample; (5) and (4) repeating the steps (3) to (4) at least once, and then carrying out liquid silicon infiltration to obtain the modified SiC/SiC composite material. The modified SiC/SiC composite material prepared by the invention has an in-situ grown complete carbon interface layer and excellent mechanical properties.
priorityDate 2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 48.