http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113675298-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d9de52bba13e16028dffa8775e3f3f28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_66788b8eac539114cb601a73bcad0ed8 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02168 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 |
| filingDate | 2021-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e39f874c0d8029ebdcdd56f598514bbe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3460dd62d20bda9c5d532ae63c79b6c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cf12bb862d59ff537935624da927797 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cb4bf963a6471ab7242e7e33cfde44d |
| publicationDate | 2021-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113675298-A |
| titleOfInvention | TOPCon crystal silicon solar cell with nano-micron structure |
| abstract | A TOPCon crystalline silicon solar cell implementation method with a nano-micron structure is characterized in that after a micron structure pyramid is prepared on the front side of an n-type crystalline silicon substrate by adopting an alkaline solution, a silicon nano-pillar array or a metal nano-particle array is prepared on the micron structure pyramid; then forming a p-n junction on the front surface through high-temperature boron diffusion, and preparing a silicon oxide/doped polysilicon laminated structure on the back surface through an LPCVD method or a PVD method; and finally, covering the aluminum oxide/hydrogenated silicon nitride laminated layer and the metal Ag/Al grid line on the p-n junction on the front surface in sequence, and covering the hydrogenated silicon nitride layer and the metal Ag grid line on the silicon oxide/doped polysilicon laminated structure on the back surface. The invention can obviously reduce the reflectivity of the silicon wafer to incident light, thereby enabling more photons to be absorbed by the crystalline silicon substrate, simultaneously, the new suede structure does not bring about larger carrier recombination, and the efficiency of the cell is comparable to that of the conventional cell. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114649425-A |
| priorityDate | 2021-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.