http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113668053-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-02 |
| filingDate | 2021-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113668053-B |
| titleOfInvention | Black phosphorus film reaction device and black phosphorus film preparation method |
| abstract | The invention discloses a black phosphorus film reaction device and a black phosphorus film preparation method, wherein the device comprises a vacuum sealed reaction chamber, a slow release body is arranged in the reaction chamber, the slow release body divides the reaction chamber into a first reaction chamber for placing reactants and a second reaction chamber for placing a growth substrate, capillary channels are formed in the slow release body, and the pressure intensity in the second reaction chamber is controlled to be smaller than the pressure intensity in the first reaction chamber in the heating reaction process. The invention arranges a section of slow release body filling between the reactant and the growth substrate to properly inhibit the transmission of the gaseous source in the first reaction cavity to the second reaction cavity, thereby controlling the pressure at the growth end not to be too high, namely the pressure of the second reaction cavity is less than that of the first reaction cavity, improving the uniformity of source supply in time, effectively inhibiting the formation of excessive nucleation points on the substrate and finally obtaining the single crystal film or the alloy film with high crystallization quality. |
| priorityDate | 2021-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.