http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113659055-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
filingDate 2021-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76d92a7d7d50da242c1bdf52529595a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f31e5a42595486f195978b94083f9fdc
publicationDate 2021-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113659055-A
titleOfInvention Device capable of improving LED luminous efficiency based on surface plasma
abstract The invention discloses a device capable of improving LED luminous efficiency based on surface plasma, which is characterized by comprising an N-pole grating layer, a multi-quantum well (MQWS) layer, a P-pole grating layer and an Indium Tin Oxide (ITO) buffer layer which are sequentially overlapped from bottom to top, wherein the P-pole grating layer and the ITO buffer layer are in a grating ridge mosaic shape, a group of strip-shaped metal Ag is uniformly distributed on the upper surface of the ITO buffer layer, the edges of the N-pole grating layer and the ITO buffer layer are respectively provided with an N electrode N-nad and a P electrode P-nad, and the N electrode N-nad and the P electrode P-nad are in diagonal positions with the physical center of the device. The device can improve the quantum efficiency and the light extraction rate in the LED.
priorityDate 2021-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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