| abstract |
The present disclosure provides a semiconductor device structure. The structure includes a first gate electrode layer, a second gate electrode layer, and a dielectric feature disposed between the first gate electrode layer and the second gate electrode layer. The dielectric feature has a first surface. The structure further includes a first conductive layer disposed on the first gate electrode layer. The first conductive layer has a second surface. The structure further includes a second conductive layer disposed on the second gate electrode layer. The second conductive layer has a third surface, and the first surface, the second surface and the third surface are coplanar. The structure further includes a third conductive layer disposed on the first conductive layer, a fourth conductive layer disposed on the second conductive layer, and a dielectric layer disposed on the first surface of the dielectric feature. The dielectric layer is disposed between the third conductive layer and the fourth conductive layer. |