http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113594285-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0352 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0687 |
| filingDate | 2021-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113594285-B |
| titleOfInvention | Forward four-junction gallium arsenide solar cell and manufacturing method thereof |
| abstract | The invention relates to a forward four-junction gallium arsenide solar cell and a manufacturing method thereof y The AlGaAs buffer layer, a first group of DBRs, a first sub-battery, a second tunneling junction, a second group of DBRs, a second sub-battery, a third tunneling junction and an AlGaInP top battery; the first sub-battery consists of In x AlGaAs back electric field, In x GaAs base region, segmented quantum dot In x A GaAs emission region and a first AlInP or GaInP window layer; the second sub-battery consists of In x AlGaAs back electric field, In x AlGaAs base region, segmented quantum dot In x AlGaAs emitting region and second AlInP or GaInP window layer; the AlGaInP top battery consists of an AlGaInP back electric field, a GaInP base region, a GaInP emitting region and an IZO window layer. The forward four-junction gallium arsenide solar cell manufactured by the invention has the advantages of greatly improved current density, high photoelectric conversion rate and good stability. |
| priorityDate | 2021-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557771 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14770 |
Total number of triples: 22.