| abstract |
The present invention is a method for forming an etching pattern in a semiconductor manufacturing process, which is a conventional method in which four layers of photoresist film/anti-reflection film/SiON film/organic hard mask are usually formed on a wafer before the etching process. , an innovative method in which only two layers consisting of a photoresist film/multifunctional organic-inorganic mask are formed and the same etching pattern is formed, which absolutely simplifies the process compared with the previous method, greatly improves the production time and The cost, the expensive coating and deposition equipment used in the existing method is no longer required, thus showing the ability to reduce the cost of expensive precursors required for SiON deposition or the cost of organic hard masks and related equipment required for deposition. Excellent results for investment or maintenance costs. |