| abstract |
The disclosed embodiments provide a semiconductor structure. The semiconductor structure includes a first and a second fully-wrapped-gate field effect transistor, which may be formed on the substrate. The first all-around gate transistor comprises at least one silicon plate, a first gate structure, a first source region and a first drain region. The second all-around gate transistor comprises at least one silicon germanium plate, a second gate structure, a second source region and a second drain region. The first all-around gate transistor may be an n-type field effect transistor and the second all-around gate transistor may be a p-type field effect transistor. The gates of the first gate structure and the second gate structure may comprise the same conductive material. Each silicon plate and each silicon germanium plate may be single crystalline and may have the same crystallographic orientation for the miller index. |