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filingDate 2021-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113540334-A
titleOfInvention A laser irradiated PbS quantum dot embedded SnSe thermoelectric material and its preparation method and application
abstract The invention discloses a laser-irradiated PbS quantum dot embedded SnSe thermoelectric material, a preparation method and application thereof, and belongs to the technical field of thermoelectric materials and devices. The preparation method includes: uniformly dispersing PbS in a solvent to obtain a solution A, irradiating the solution A with a non-focused laser in ultrasound to obtain a solution B; uniformly dispersing SnCl 2 ยท2H 2 O in the solvent to obtain a solution C, Disperse NaSeO uniformly in solution C to obtain solution D; mix solution B and solution D uniformly to obtain solution E, disperse NaOH uniformly in solution E and carry out solvothermal reaction, wash and dry the obtained product system to obtain a solid product ; The solid product is processed by spark plasma sintering to obtain laser-irradiated PbS quantum dot embedded SnSe thermoelectric material. The obtained laser-irradiated PbS quantum dots are embedded in the SnSe thermoelectric material to improve the electrical conductivity and the Seebeck coefficient, and can be applied to the preparation of ultra-long-life power supplies for deep space spacecraft or the preparation of self-powered infinite sensors.
priorityDate 2021-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 41.