http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113533481-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_105b6f01d9ecae0f98b17ef96ad24fef |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
| filingDate | 2021-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cc3323c24e21fcd032fb8e86a70726d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c28b7cce1dbbab0db93bdb7926c9278 |
| publicationDate | 2021-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113533481-A |
| titleOfInvention | Metal oxide interface engineering-based field effect transistor, pH sensor and preparation method thereof |
| abstract | The invention provides a field effect transistor based on metal oxide interface engineering, a pH sensor and a preparation method thereof. A layer of ultra-thin alumina was deposited on an indium oxide field effect transistor by a solution method based process to prepare a pH-responsive alumina/indium oxide interface. The aluminum oxide passivation layer effectively protects an indium oxide semiconductor channel, and the pH sensor manufactured by the method has the advantages of low working voltage, high sensitivity and low drift under long-term continuous pH monitoring. |
| priorityDate | 2021-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 62.