| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_62b0e94cf02d8d6b144dc7258338ac0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_079d992c41097c13960c9a57cb55f608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-92 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 |
| filingDate |
2020-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e8e267b608dc8f463e1ad880e594be1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53c15683b778895c54450ee324e17520
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c27281fa5a97c2caef9f8078006be919
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bce9b6086fa35188d130c7d901ce567c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90707cc5232f317b831c446d7f64a91e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78f3aa56f6ae0c213d6ba851d460ee5f |
| publicationDate |
2021-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113517171-A |
| titleOfInvention |
Semiconductor device with high depth-width ratio structure and manufacturing method thereof |
| abstract |
The application relates to a manufacturing method of a semiconductor, in particular to a semiconductor substrate which forms a sacrificial mold layer; etching the sacrificial mold layer to form a groove, wherein the groove is used for forming a target structure; and forming a side wall layer on the side wall of the groove. The manufacturing method can solve the problems of insufficient opening or arch-shaped opening in the opening process with high depth-to-width ratio, and can reduce the critical dimension of the semiconductor structure by adopting a simple process so as to replace the prior process of adopting complex multiple patterning and the like to control and reduce the critical dimension. |
| priorityDate |
2020-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |