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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e737395866b76e19491d12ce1e1e2e19
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publicationDate 2021-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113512053-A
titleOfInvention Preparation method and application of polyfused ring n-type semiconductor material
abstract The invention relates to an ultra-low LUMO energy level multi-SN hetero-fused ring n-type organic semiconductor material, which can be applied to organic field effect transistors, organic thin film solar cells and perovskite cells. Using 1,5-diaminonaphthalene as the initial raw material, through multi-step synthesis, 5,11-difluoroquinoxaline[6,5-f]quinoxaline was obtained, which was then combined with 1,1-dicyanoethylene-2 , 2-sodium dithiolate reacts to obtain the multi-fused ring n-type semiconductor material. The material of the present invention is formed by condensing a plurality of aromatic rings, has a larger planar structure, and four strong electron-withdrawing groups (cyano groups) can effectively reduce the LUMO energy level of the molecule, which is a kind of material with good development prospects. of n-type semiconductor materials.
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