| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e82fcda35791e985aee7820f86bf4857 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2021-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb6beaee496f459ba41de083200d27fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24b2cbd9e683aa149070e5b04aadfe07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9093b7760f1f50814a95dcc5abcb4b06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71d0c81cb50adcb1a8fcb18a4b918cd0 |
| publicationDate |
2021-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113506767-A |
| titleOfInvention |
A kind of manufacturing method of TSV adapter board |
| abstract |
The invention discloses a method for manufacturing a TSV adapter plate, which comprises the following steps: step 1: etching TSV holes on a silicon plate; step 2: depositing on the sidewall of the TSV holes by using a plasma enhanced chemical vapor deposition method insulating layer; step 3: deposit a layer of Ti on the outer surface of the insulating layer as a barrier layer, and deposit another layer of copper on the outer surface of the barrier layer as a seed layer; step 4: electroplating the TSV hole in step 3. The invention solves the technical problem of the TSV deep hole manufacturing process in the prior art. |
| priorityDate |
2021-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |