http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113484403-A

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filingDate 2021-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae44fe88fe433d711c6bd670b8ac0514
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publicationDate 2021-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113484403-A
titleOfInvention A test method for trace element contamination on the surface of gas dispersing components used in semiconductor manufacturing
abstract The present invention relates to the field of semiconductor technology. A method for testing trace element contamination on the surface of a gas dispersing component for semiconductor manufacturing, comprising the following steps: step 1, placing a clean hydrophobic smooth surface in a sampling area, dripping an appropriate amount of dilute nitric acid solution on its surface, and after a certain period of time The solution was recovered and placed in a clean empty bottle, and the element content in the solution was tested by ICP-MS; in step 2, a clean hydrophobic smooth surface was placed in the sampling area, and an appropriate amount of dilute nitric acid solution was dropped on its surface. The effect of surface tension will make the solution aggregate into a spherical shape, and then take out the sample of parts with through holes to be tested and gently place it on the spherical solution. After a certain period of time, the sample is gently taken out, and the solution is recovered and placed in a clean In the empty bottle, use ICP-MS to test the element content in the solution; step 3, take the difference between the two test results, and calculate the trace element contamination content of the workpiece to be tested by formula calculation.
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