| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0705 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate |
2020-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9b382afbbd6f37304bfb343e3ead9bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b99f3a6611fd0ebbf26735c88b57a3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf8d1ddf3afc1b07a03e143e1c10d4c3 |
| publicationDate |
2021-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113474888-A |
| titleOfInvention |
Dual mode fast recovery circuit device |
| abstract |
A dual mode fast recovery circuit device is disclosed. The dual mode fast recovery device may be used for electrostatic discharge (ESD) protection and may provide both positive and negative ESD protection. The dual mode fast recovery device may implement an n-type metal oxide semiconductor (NMOS) transistor (e.g., a grounded gate NMOS transistor, such as a grounded gate extended drain NMOS (ggedmos) transistor) to provide protection against positive ESD events and a Bipolar Junction Transistor (BJT) (e.g., a PNP BJT) to provide protection against negative ESD events. Other embodiments may be described and claimed. |
| priorityDate |
2019-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |