http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113410759-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e106154a25296e72132de699559d897 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04256 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-0687 |
| filingDate | 2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66cd163f965acda3ff7ff481f29c86ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c3007a90d903d8b0addb7e839f86416 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_787359ab8e462c5eac580d5c99fa955a |
| publicationDate | 2021-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113410759-A |
| titleOfInvention | Semiconductor laser integrated chip and preparation method thereof |
| abstract | The invention discloses a semiconductor laser integrated chip and a preparation method thereof, wherein the integrated chip comprises a laser emitting unit and a laser detecting unit; the integrated chip further comprises: a common epitaxial structure; the first medium structure and the discrete epitaxial structure are positioned on one side of the common epitaxial structure; the discrete epitaxial structure comprises a first discrete epitaxial structure and a second discrete epitaxial structure; the laser emitting unit comprises a public epitaxial structure, a first discrete electrode and a public electrode; the laser detection unit comprises a public epitaxial structure, a second discrete electrode and a public electrode; the laser emitting unit has a first cavity length, the laser detecting unit has a second cavity length, the first dielectric structure has a third cavity length, and the cavity length of the semiconductor laser integrated chip is the sum of the first cavity length, the third cavity length and the second cavity length. The technical problems that the length of a laser cavity is difficult to understand, the yield is low, the output power is unstable, and the use scene and the use range of the laser are affected are solved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113851925-A |
| priorityDate | 2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.