http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113410389-B

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-10
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48
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filingDate 2021-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113410389-B
titleOfInvention A kind of quantum dot solar cell and preparation method thereof
abstract The invention provides a quantum dot solar cell, comprising a conductive substrate, an interface buffer layer, an n-type PbS quantum dot layer, a p-type PbS quantum dot layer and an electrode layer which are stacked in sequence; the interface buffer layer is made of Al At least one of 2 O 3 , ZnO and SnO 2 . The invention uses at least one of metal oxides Al 2 O 3 , ZnO and SnO 2 as the material of the interface buffer layer, which can effectively passivate the interface defect between the conductive substrate and the n-type PbS quantum dot layer and adjust the energy band structure. , effectively improving the photoelectric performance of quantum dot solar cells; at the same time, the light absorption layer and the hole transport layer, namely the n-type PbS quantum dot layer and the p-type PbS quantum dot layer are arranged adjacent to each other to form a p-n junction, thereby further improving the interface. At the same time, it can effectively suppress the generation of hysteresis phenomenon.
priorityDate 2021-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.