http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113387359-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f87e59e97eb80f892d15a4f83f854e48 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-10721 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-107 |
| filingDate | 2021-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1455826d090d6394c3cd2b6ea1165fa6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_133effacff32fbd7e34e9d59c4fee592 |
| publicationDate | 2021-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113387359-A |
| titleOfInvention | Method and system for preparing polycrystalline silicon from crystalline silicon dioxide |
| abstract | In order to overcome the problem that the purity of polysilicon is difficult to control due to the introduction of impurities into the initial raw materials in the existing polysilicon production process, the present invention provides a method for preparing polysilicon from crystalline silicon dioxide, comprising the following operation steps: obtaining crystalline silicon dioxide , the crystalline silica is placed under the irradiation of high-energy particles to convert the crystalline silica into amorphous silica; the amorphous silica is reacted with reducing carbon and chlorine to obtain silicon tetrachloride; Silicon chloride and hydrogen react at high temperature to form polysilicon. At the same time, the invention also discloses a system for preparing polycrystalline silicon from crystalline silicon dioxide. The method and system for preparing polysilicon from crystalline silicon dioxide provided by the present invention use crystalline silicon dioxide irradiated by high-energy particles as the initial raw material, which not only ensures high purity and low impurity content of the initial raw material, but also realizes the direct raw material for the production reaction of polycrystalline silicon. The high-purity production of silicon tetrachloride ensures the high chemical activity of the initial raw material, effectively improves the reaction efficiency and reduces energy consumption. |
| priorityDate | 2021-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.