http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113380696-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ae3a956054a5b4dd96686a962474809 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2021-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70db7ad493e3ce66af07716d30ce8492 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ba78fed0c4403e19e38baa8a9d3ce1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c001c47272c3e02c7718d2e40970889 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_534601e9a419b7d55f8a1ab8e9c08d8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b081430962798a5312b2c8edea0e99c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4647646fbcc1dbb06d250ad15b0b4bc |
| publicationDate | 2021-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113380696-A |
| titleOfInvention | Deep groove filling method and deep groove filling structure |
| abstract | The invention relates to a deep groove filling method and a deep groove filling structure. The above-mentioned deep trench filling method includes the following steps: providing a semiconductor substrate with at least one deep trench, and the aspect ratio of the deep trench is less than or equal to 40; placing an insulating member on the semiconductor substrate, and the insulating member shields the opening of the deep trench , the material of the insulating part is a polymer material; the insulating part is heated to make the insulating part in a liquid state; under vacuum conditions, the insulating part is pressurized to fill the liquid insulating part in the deep groove, and then cured, and the deep groove is cured. An insulating layer is formed inside. The above-mentioned deep trench filling method only takes several minutes to ten minutes to fill the insulating layer in the deep trench, which greatly saves the deposition time and improves the production efficiency compared with the traditional chemical vapor deposition method (requires dozens of hours). In addition, the material of the insulating material using polymer material as the insulating layer has little difference in dielectric constant compared with the traditional silicon dioxide as the insulating layer, and is even partially higher than that of silicon dioxide, with good insulation. |
| priorityDate | 2021-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.