| abstract |
The invention discloses a method for preparing polysilicon with subsection control. By subsection controlling the mass ratio of high-purity trichlorosilane (TCS) and high-purity dichlorodihydrosilicon (DCS) in a reduction furnace in different periods, the method of the invention is implemented. Fine control, reasonable allocation of resources, and good control of the DCS content at each stage are beneficial to the reduction and refinement operation, which can reduce production costs, improve surface quality, and reduce failures and shutdowns. It is worth promoting. |