http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113363385-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5672a31ac64bfb83751afe989bc79441 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G13-06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-101 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-33 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 |
| filingDate | 2020-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5290a0f4085221b9bb4c23be62ebd71d |
| publicationDate | 2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113363385-A |
| titleOfInvention | Capacitor preparation method and capacitor |
| abstract | A method for manufacturing a capacitor, comprising: providing a substrate; sequentially forming a first mold layer, a first support layer, a second mold layer and a second support layer on the substrate, the first mold layer and the At least one of the second mold layers includes an insulating medium with low dielectric constant or ultra-low dielectric constant; at least one through contact hole is opened, the first support layer and the second support layer after the contact hole is opened The supporting layer forms a first supporting layer pattern and a second supporting layer pattern; a lower electrode is formed on the inner surface of the contact hole, so that the first supporting layer pattern and the second supporting layer pattern are located on the lower electrode and removing the first mold layer and the second mold layer after opening the contact hole, wherein the first mold layer and/or the second mold layer including the insulating medium The layers are removed using an ashing process. The present application also provides capacitors made by the above method. |
| priorityDate | 2020-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.