http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113345528-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_adf0b7d18a629c27d9272544bcffe99b
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filingDate 2021-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73ee73b32bd82f4bed19c19dd8e93afd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d98aeb9a7fe78d87f27bf9f9df2c11c
publicationDate 2021-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113345528-A
titleOfInvention Simulation prediction method, device and application of cracking state of methyltrichlorosilane gas
abstract The invention relates to methyltrichlorosilane (CH) 3 SiCl 3 MTS) gas cracking state simulation and prediction method, equipment and application, the method simulates the cracking process of the methyltrichlorosilane gas in reaction equipment by a simplified methyltrichlorosilane gas cracking reaction kinetic mechanism, and the cracking state under the given process condition is obtained by prediction; constructing an initial database of a methyl trichlorosilane gas cracking reaction kinetic mechanism; and carrying out deviation debugging and sensitivity debugging on the initial database to obtain the simplified trichloromethylsilane gas cracking reaction kinetic mechanism. Compared with the prior art, the method has the advantages of accuracy, reliability and the like, and the cracking of the methyltrichlorosilane gas in the reaction equipment can be obtained by a simulation and prediction method of the cracking state of the methyltrichlorosilane gasAnd regulating and optimizing the technological parameters of the silicon carbide coating preparation process based on the cracking state.
priorityDate 2021-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.