http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113314469-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-31 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2021-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113314469-B |
| titleOfInvention | Bit line contact structure and method of forming the same, semiconductor structure and semiconductor device |
| abstract | The present disclosure relates to a bit line contact structure and a method for forming the same, a semiconductor structure and a semiconductor device, including: providing a base; the base comprising a substrate, shallow trench isolation structures arranged at intervals in the substrate, and side by side distributed in the substrate A plurality of word line structures are formed, and the top of the word line structures are all provided with a first passivation layer; a mask layer is formed on the surface of the first passivation layer, and the mask layer is etched to obtain a plurality of first masks. There are first openings between two adjacent first mask blocks, and the lateral size of the first openings gradually decreases along the first direction; the substrate and the word line structure are etched by using the first mask blocks, forming a bit line contact hole in the substrate, the lateral size of the bit line contact hole is gradually reduced along a first direction; depositing a first conductive layer in the bit line contact hole to form a bit line contact structure; the first direction is controlled by a mask The film layer points to the first passivation layer. By forming the bit line contact structure formed by the method, the formation of voids in the bit line contact hole can be prevented. |
| priorityDate | 2021-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.