http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113308249-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67086 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 |
| filingDate | 2021-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113308249-B |
| titleOfInvention | Silicon etchant, method for manufacturing silicon device using same, and method for treating substrate |
| abstract | The present invention relates to a silicon etchant, a method for manufacturing a silicon device using the etchant, and a method for treating a substrate. Provided is a silicon etchant capable of suppressing the influence of the crystal orientation of silicon and capable of performing the same etching process regardless of the crystal orientation of single crystal grains in a polycrystalline silicon film. An isotropic silicon etching solution, characterized in that it contains quaternary ammonium hydroxide, water, and at least one compound selected from the group consisting of compounds represented by the following formula (1) and formula (2), and Condition 1 and Condition 2 below are satisfied. R 1 O－(C m H 2m O) n －R 2 (1)HO－(C 2 H 4 O) p －H(2) Condition 1: 0.2≤etching rate ratio (R 110 /R 100 )≤1 Condition 2: 0.8≤etching rate ratio (R 110 /R 111 )≤4 (In the above conditions, R 100 represents the etching rate for the 100-face of single-crystal silicon, and R 110 represents the etching rate for the 110-face of single-crystal silicon Speed, R 111 represents the etching speed relative to the 111 plane of single crystal silicon). |
| priorityDate | 2020-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.