| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
| filingDate |
2021-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f87b5e6f1907c381bc41db1f133a60ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73fe031f830b6c0a77b0f905d3b42019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8e84e0d974375f48f23d7b360e91b1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f3767a5ba715e59b6995fd2f3a47b41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e359c2965a79d792cd40cbfdfec57165 |
| publicationDate |
2021-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113270485-A |
| titleOfInvention |
Post-formation repair of dielectric features |
| abstract |
The present disclosure relates to post-formation repair of dielectric features. Specifically, the present disclosure provides embodiments of semiconductor structures and methods of forming the same. An exemplary semiconductor structure includes a first source/drain feature and a second source/drain feature and is disposed between and along the first source/drain feature and the second source/drain feature A hybrid fin extending longitudinally in the first direction. The hybrid fin includes an inner feature and an outer layer disposed around the inner feature. The outer layer includes silicon oxycarbonitride, and the inner feature includes silicon carbonitride. |
| priorityDate |
2020-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |