| abstract |
Depositing copper structures with high density of nanotwins on the substrate. The electrical conditions for depositing the nanotwinned copper structure may comprise a pulsed current waveform applied alternating between constant current and no current, wherein the duration of no current is significantly greater than the duration of constant current. In some implementations, the nanotwinned copper structure is deposited by applying a pulsed current waveform followed by a constant current waveform. In some implementations, nanotwinned copper structures are deposited on a highly oriented substrate layer, wherein the electroplating solution contains accelerator additives. In some implementations, nanotwinned copper structures are deposited on a non-copper seed layer. In some implementations, the nanotwinned copper structures are deposited at relatively low flow rates. |