http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113257932-B

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filingDate 2021-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113257932-B
titleOfInvention A kind of high-performance photodetector and preparation method thereof
abstract The invention belongs to the technical field of photodetectors, and discloses a method for preparing a high-performance photodetector, in which CdS x Se 1-x nanosheets are spin-coated on a silicon-based substrate, and electron beam lithography and electron beam evaporation coating technologies are used A gold electrode is deposited, then CsPbBr 3 nanocrystals are spin-coated, and after annealing treatment, a composite structure photodetector of all-inorganic CsPbBr 3 perovskite nanocrystals/two-dimensional non-layered cadmium selenium sulfide nanosheets is obtained. The invention utilizes the high stability of the all-inorganic perovskite crystal, and combines the excellent physical properties of the two-dimensional non-layered material with the strong light absorption characteristics of the perovskite to improve the charge loading at the interface of the composite nanostructure. carrier transport capability, thereby improving the performance of photodetectors.
priorityDate 2021-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 49.