http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113257671-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D2257-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D2253-202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D2253-106 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-261 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-26 |
| filingDate | 2021-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113257671-B |
| titleOfInvention | Semiconductor device etching method using high-purity electronic grade hexafluorobutadiene |
| abstract | The invention relates to the field of semiconductor devices, and discloses a semiconductor device etching method using high-purity electronic grade hexafluorobutadiene, which comprises the following steps: grafting a polyacrylamide cross-linked network onto the pore wall of the C-type silica gel to prepare water absorption response type silica gel; sequentially carrying out absorption responsive silica gel adsorption impurity removal, light component rectification and heavy component rectification on the raw material gas of the hexafluorobutadiene to obtain high-purity electronic grade hexafluorobutadiene; an insulating layer is formed on a semiconductor substrate, a patterned mask layer is formed on the insulating layer, an etching gas containing high-purity electron-grade hexafluorobutadiene is made into plasma, and then the insulating layer is dry-etched by the plasma. The water absorption response type silica gel adopted by the invention can utilize the water absorption swelling characteristic of the crosslinking network in the pores to ensure that the water absorption rate is higher in the initial stage and the later stage of the adsorption, thereby reducing the water content in the high-purity electronic-grade hexafluorobutadiene and preventing the influence on the performance of a semiconductor device after the etching. |
| priorityDate | 2021-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.