http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113241375-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0607 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2021-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113241375-B |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | The present invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises: an SOI substrate, including a bottom-up lower substrate, an insulating buried layer and a semiconductor layer, wherein a device active region is formed in the semiconductor layer , a trench isolation structure is formed around the periphery of the active region of the device; a gate layer is formed on the semiconductor layer, and the gate layer extends from the active region of the device to the trench isolation structure and, a source region and a drain region, respectively formed in the active region of the device on both sides of the gate layer, at least one end of the gate layer spanning the active region of the device and the trench The portion at the interface of the trench isolation structure extends toward the source region and/or the drain region. The technical solution of the present invention reduces edge leakage at the interface between the active region of the device and the trench isolation structure, thereby improving the performance of the semiconductor device. |
| priorityDate | 2021-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419593443 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID518712 |
Total number of triples: 23.