http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113241297-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_65682d3e437c225d79b93953b4b26392 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02656 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-32 |
| filingDate | 2021-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf093551903f75903e50f408a4e79721 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34e48f9abac320178eeef5bb09b6a7b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bde953a7f43466577abbd891a5df224f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98ef425656a4e8c779a178790a820e22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_651a7aecbc224783aecd628ce400d394 |
| publicationDate | 2021-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113241297-A |
| titleOfInvention | Method for growing gallium nitride by using self-disappearing graphene mask |
| abstract | The invention discloses a method for growing gallium nitride by using a self-disappearing graphene mask, which comprises a gallium nitride layer, a mask layer and a substrate layer, wherein the graphene mask layer is directly grown on the substrate layer by a plasma enhanced chemical vapor deposition method, the graphene mask layer forms a grating-shaped stripe structure by etching, the gallium nitride layer is grown on the substrate layer by metal organic chemical vapor deposition, and the graphene mask layer is decomposed and disappears in the growth process of the gallium nitride layer to leave an air gap. The invention has the beneficial effects that: the graphene mask layer structure can effectively reduce gallium nitride dislocation and improve the growth quality of the gallium nitride dislocation; because the graphene mask layer is decomposed and disappears in the growth process, the stress and small-angle grain boundary defects brought to gallium nitride by the mask are reduced. The structure can also be applied to III-V compound semiconductors other than gallium nitride. |
| priorityDate | 2021-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.