| abstract |
Integrated circuit (IC) structures include gate structures, source epitaxial structures, drain epitaxial structures, front side interconnect structures, back side dielectric layers, and back side vias. The source epitaxial structure and the drain epitaxial structure are respectively located on opposite sides of the gate structure. The front side interconnect structure is on the front side of the source epitaxial structure and the front side of the drain epitaxial structure. A backside dielectric layer is located on the backside of the source epitaxial structure and the backside of the drain epitaxial structure, and has an air gap therein. The backside via extends through the backside dielectric layer to the first of the source epitaxial structure and the drain epitaxial structure. Embodiments of the present application also relate to methods of forming semiconductor devices. |