abstract |
The present invention relates to a method for producing a gallium oxide film, comprising transporting a mist generated by atomizing or dropletizing a raw material solution using a carrier gas, heating the mist, and thermally reacting the mist on a substrate. A method for producing a formed gallium oxide film, wherein a raw material solution containing at least chloride ions and gallium ions is used as the raw material solution, and the time for heating the mist is 0.002 seconds or more and 6 seconds or less. As a result, it is possible to provide a method for producing an α-gallium oxide film that is low-cost and excellent in film-forming speed. |