| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2019-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59f0314f8a6bc97d41704baaa4a32677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f653e604390bc4320eb8982c9a222773
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3650c42e4e8ed8aedcd3f8b22519e31c |
| publicationDate |
2021-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113196449-A |
| titleOfInvention |
Plasma Enhanced Wafer Immersion for Thin Film Deposition |
| abstract |
Apparatus and methods are disclosed for providing a substrate onto a substrate support in a processing chamber; generating an inert plasma in the processing chamber; and maintaining the inert plasma to provide the substrate from The substrate is heated to a steady state temperature suitable for plasma enhanced chemical vapor deposition (PECVD) in less than 30 seconds down onto the substrate support. An apparatus may include: a processing chamber; a processing station including a substrate support; a processing gas unit configured to flow an inert gas onto a substrate supported by the substrate support; a plasma source configured to generate an inert plasma in the processing station; and a controller including instructions configured to: flow the inert gas onto the substrate; The inert plasma is generated in a first processing station; and the inert plasma is maintained to thereby heat the substrate. |
| priorityDate |
2018-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |