| abstract |
In this paper, a heterojunction thin-film solar cell with different stable stacking structures of different black phosphorene-like materials and its preparation method are presented. The heterojunction thin film solar cell sequentially includes five layers from bottom to top: a lower electrode, a substrate, a double-layer rotating AB-stacked GeS, a double-layer AD-stacked GeSe, and an upper electrode. The combination of double-layer rotating AB-stacked GeS and double-layer AD-stacked GeSe can form a type II semiconductor heterojunction. AD structure is used as the donor with a band gap of 1.474 eV, and the AB structure is used as the acceptor. Double-layer black phosphorus-like structures with different stacking structures were obtained by mechanical exfoliation. Under the illumination of white light, the open-circuit voltage of the solar cell provided in this paper can theoretically reach 1.15V, the short-circuit current density can reach 299.13A/㎡, and the AM1.5 energy conversion efficiency of the solar cell is as high as 22.44%. |