| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-105 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2020-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1105f6770c0dbb6eb33b068f6ed82ac5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11aacfa5d2bbebf79e2549a69e2c08b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a518fe114c34ec59a53984398cf6784
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4731b9894b3e64738c02c332de714b8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50a0c8f823e94b56ea093658bf736bf1 |
| publicationDate |
2021-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113178412-A |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
Embodiments of the present invention provide semiconductor devices including an isolation structure having a first electrical insulator layer in a trench in a semiconductor substrate and a second electrical insulator in the trench and over the first electrical insulator layer Floor. Embodiments of the present invention also provide a method of forming a semiconductor device. |
| priorityDate |
2020-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |