| abstract |
The present invention provides a three-dimensional memory device comprising: alternating stacks of insulating layers 32 and conductive layers 46, the alternating stacks being positioned over substrates (9, 10); a first memory opening filling structure 58A, the third A memory open-fill structure extends through the alternating stacks (32, 46), wherein each of the first memory open-fill structures (58A) includes a corresponding first memory film (50), contacts the Corresponding first vertical semiconductor channels (60) of inner sidewalls of corresponding first memory films (50) and corresponding first dielectric cores (62) having circles at their lower portions oval or oval horizontal cross-sectional shape, and has a semi-circular or semi-oval horizontal cross-sectional shape at its upper portion. |